NTE553 Schottky Barrier Diode
Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20 to + 60C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -45 to + 125C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Reverse Breakdown Voltage Reverse Leakage Current Forward Voltage Diode Capacitance Series Resistance Series Inductance Symbol V(BR)R IR VF CT RS LS Test Conditions IR = -10A VR = -25V IF = 10mA VR = -6V, f = 1MHZ IF = 2mA, f = 100MHZ f = 250MHZ Min -35 - - - - - Typ - - - - - 3 Max - -0.1 1.0 1.2 1.2 - Unit V A V pf nH
1.000 (25.4) Min
.200 (5.08) Max
.022 (0.509) Dia Max
.090 (2.28) Dia Max
Color Band Denotes Cathode
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